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Graphite Microislands Prepared for Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory
Author(s) -
Ding Wentao,
Tao Ye,
Li Xuhong,
Lin Ya,
Wang Zhongqiang,
Xu Haiyang,
Zhao Xiaoning,
Liu Weizhen,
Ma Jiangang,
Liu Yichun
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800285
Subject(s) - materials science , amorphous solid , graphite , reliability (semiconductor) , amorphous carbon , carbon fibers , optoelectronics , electrical conductor , volt , voltage , resistive random access memory , degradation (telecommunications) , resistive touchscreen , composite material , thin film , nanotechnology , electrical engineering , power (physics) , chemistry , crystallography , physics , engineering , quantum mechanics , composite number
Uniform graphite microislands (GMs) are prepared through catalytic graphitization of amorphous carbon (a‐C) thin film. Taking advantage of the specific structural feature of the GMs, we demonstrate an effective approach to improve the reliability of amorphous carbon based resistive random access memory devices. Through investigating the temperature dependence of the high/low resistance states (HRS/LRS), it is verified that the conductive filaments (CFs) prefer to grow along the GMs. The enhancement of local‐electric‐field around the GMs can not only induce a lower forming/set voltage to largely avoid CFs overgrowth, but also simplify the CFs morphology. As a result, the relative fluctuation of HRS/LRS resistance reduces from 82.8%/46.3% to 27.4%/18.8%, respectively. In addition, the memory devices with GMs structure exhibit a low cycling degradation and good retention (>10 4 s at 85 °C).