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Spatial Projection of Electronic Conductivity: The Example of Conducting Bridge Memory Materials
Author(s) -
Prasai Kiran,
Subedi Kashi N.,
Ferris Kaelyn,
Biswas Parthapratim,
Drabold David A.
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800238
Subject(s) - chalcogenide , miniaturization , conductivity , amorphous solid , materials science , bridge (graph theory) , nanotechnology , flash memory , electron , cluster (spacecraft) , engineering physics , chemical physics , optoelectronics , computer science , physics , chemistry , crystallography , medicine , quantum mechanics , programming language , operating system
Conducting bridge random access memory materials have special promise for FLASH memory, other applications beside, and also special potential for continued miniaturization. They are electronic materials of unique flexibility. Here, we offer new models of Cu‐doped alumina, and reveal qualitative differences in the behavior of transition metal ions in chalcogenide and oxide hosts, showing that Cu clusters in an amorphous alumina host, in contrast with chalcogenides in which the metal atoms do not cluster. We further elucidate the processes of electron transport. To determine these, the Kubo–Greenwood formula is cast in a form to enable the estimate of a space‐projected conductivity. The method reveals those parts of the networks that may conduct a current (or absorb radiation at frequency ω ).