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Local Homoepitaxial Growth in Sputtered NiO Thin Films: An Effective Approach to Tune the Crystallization, Preferred Growth Orientation, and Electrical Properties
Author(s) -
Wang Yong,
Ghanbaja Jaafar,
Soldera Flavio,
Boulet Pascal,
Horwat David,
Mücklich Frank,
Pierson JeanFrancois
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800191
Subject(s) - materials science , crystallization , non blocking i/o , layer (electronics) , electrical resistivity and conductivity , texture (cosmology) , thin film , sputtering , microstructure , composite material , sputter deposition , optoelectronics , silicon , chemical engineering , nanotechnology , chemistry , electrical engineering , computer science , biochemistry , image (mathematics) , artificial intelligence , engineering , catalysis
We report the local homoepitaxial growth of NiO thin films with simultaneously tunable crystallization, preferred growth orientation, and electrical properties by reactive sputtering. Using a seed layer with〈 100 〉fiber texture previously deposited on glass and silicon substrates, the room temperature growth of highly〈 100 〉 ‐oriented NiO thin films with good crystallization has been achieved. Microstructure analyses evidence that the columns of the top layer are homoepitaxially grown on the columns of seed one. The resistivity of〈 100 〉 ‐oriented homoepitaxial layer is lower than the seed one and higher than that of single layer of multiple orientations deposited with the same condition.