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New Architecture of ZnGeN 2 /In 0.16 Ga 0.84 N Type‐II Quantum Well‐Based Green Emitting LED
Author(s) -
Rolles Mélanie,
Hyot Bérangère,
Miska Patrice
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800173
Subject(s) - light emitting diode , optoelectronics , quantum efficiency , quantum well , materials science , semiconductor , quantum dot , band gap , indium , indium gallium nitride , layer (electronics) , gallium nitride , optics , physics , nanotechnology , laser
We report here on a new green‐emitting light emitting device (LED) architecture containing only 16% of indium. The structure is based on the use of a new type‐II ZnGeN 2 /In 0.16 Ga 0.84 N quantum well. The zinc germanium nitride (ZnGeN 2 ) is a new promising semiconductor for optoelectronic devices such as LEDs or photovoltaic cells due to its large, direct, and adjustable band gap, most particularly considered to overcome the green‐gap issue in LED technology. Studies of ZnGeN 2 ‐based quantum well behaviors are scarce and no information on the overall electro‐optical operation of such LED is available. We simulate here the complete behavior of a green LED structure in which the active region is a type‐II ZnGeN 2 /In 0.16 Ga 0.84 N quantum well. A thin AlGaN layer is used as a barrier for a better carrier confinement. The position and the thickness of the ZnGeN 2 layer are parameters used to examine the luminous and electrical behavior as well as the external quantum efficiency of this LED compared to a standard In 0.22 Ga 0.78 N LED emitting at the same wavelength. We demonstrate a significant enhancement of the spontaneous emission and the possibility to reach both a better quantum efficiency and light output when using the type‐II structure.