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Quasi‐White Light‐Emitting Devices Based on SiC Quantum Dots
Author(s) -
Chen Xifang,
Guo Xiaoxiao,
Wu Wenhui,
Fan Jiyang
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800171
Subject(s) - electroluminescence , quantum dot , optoelectronics , materials science , light emitting diode , quantum tunnelling , silicon carbide , phosphor , electron , silicon , nanotechnology , physics , layer (electronics) , quantum mechanics , metallurgy
White electroluminescence based on quantum dots (QDs) is usually realized by incorporating different types of QDs or QDs plus rare earth ion phosphors into a single device. Herein, we report quasi‐white electroluminescence in pure silicon carbide QDs‐based light‐emitting devices (LEDs). The carrier transport and recombination mechanisms are investigated through analyzing the current density versus bias curves and spatial distribution of energy levels. The carrier transport mechanism is dominated by quantum tunneling at low bias and direct injection at high bias, respectively. The quasi‐white electroluminescence arises from recombination of the injected electrons and holes in the SiC QDs in the devices.