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Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni‐Tb‐InGaAs Alloy to n ‐In 0.53 Ga 0.47 As Layer
Author(s) -
Li Meng,
Lee Jeongchan,
Oh Jungwoo,
Lee HiDeok
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800131
Subject(s) - materials science , tin , contact resistance , alloy , annealing (glass) , electrical resistivity and conductivity , dopant , sputtering , layer (electronics) , stack (abstract data type) , resistive touchscreen , metallurgy , composite material , optoelectronics , nanotechnology , thin film , doping , electrical engineering , computer science , engineering , programming language
This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n ‐In 0.53 Ga 0.47 As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n ‐In 0.53 Ga 0.47 As via sputtering and Ni(Tb)‐InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity ( ρ c ) of 7.98 × 10 −9 Ω cm 2 is obtained between Ni(Tb)‐InGaAs and n ‐In 0.53 Ga 0.47 As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni‐InGaAs alloy and the lowered barrier height between Ni‐InGaAs and n ‐In 0.53 Ga 0.47 As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) based on n ‐In 0.53 Ga 0.47 As layer.