Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni‐Tb‐InGaAs Alloy to n ‐In 0.53 Ga 0.47 As Layer

This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n ‐In 0.53 Ga 0.47 As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n ‐In 0.53 Ga 0.47 As via sputtering and Ni(Tb)‐InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity ( ρ c ) of 7.98 × 10 −9  Ω cm 2 is obtained between Ni(Tb)‐InGaAs and n ‐In 0.53 Ga 0.47 As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni‐InGaAs alloy and the lowered barrier height between Ni‐InGaAs and n ‐In 0.53 Ga 0.47 As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) based on n ‐In 0.53 Ga 0.47 As layer.