Premium
Controllable Band Alignment Transition in InSe–MoS 2 Van der Waals Heterostructure
Author(s) -
Chen Xi,
Lin ZhengZhe,
Ju Ming
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800102
Subject(s) - heterojunction , van der waals force , optoelectronics , band offset , materials science , electron , perpendicular , electric field , polarization (electrochemistry) , electronic band structure , band gap , condensed matter physics , chemistry , physics , valence band , geometry , mathematics , quantum mechanics , molecule , organic chemistry
Van der Waals (vdW) heterojunctions with type‐II band alignment, in which electrons and holes are localized in distinct layers, play a central role in optoelectronic devices and solar cells. The present study analyzes a type‐I→II band alignment transition in InSe–MoS 2 vdW heterostructure, proposed to be controlled via changing interlayer distance or applying perpendicular external electric field. The band position shift of InSe relative to that of MoS 2 attributes to a surface polarization mechanism. Changing band offset into type II facilitates possible use and allows greater flexibility for band engineering of InSe–MoS 2 heterostructure in optoelectronic and solar energy applications. The present findings provide theoretical guidance to a new approach to improve the optoelectronic properties of vdW heterostructures.