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Atomic and Electronic Structure of the Clean and Adsorbate Covered (0001) Surface of the Topological Insulator Bi 2 Se 3
Author(s) -
Meyerheim Holger L.,
Tusche Christian
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800078
Subject(s) - topological insulator , bismuth , surface states , electronic structure , angle resolved photoemission spectroscopy , topology (electrical circuits) , materials science , chemistry , surface (topology) , condensed matter physics , computational chemistry , physics , geometry , combinatorics , metallurgy , mathematics
We review recent progress in the characterization of the atomic and electronic structure of pristine and adsorbate‐covered Bi 2 Se 3 (0001) using state‐of‐the‐art analysis tools like surface X‐ray diffraction, X‐ray absorption fine structure, and spin‐ and momentum‐resolved photoemission spectroscopy. On the basis of several examples we show how the topological surface state is modified by structural modifications. One example is the shift of the Dirac point of the pristine Bi 2 Se 3 (0001) surface induced by trace amounts of carbon and its concomitant expansion of the topmost inter‐layer spacing. Dosing with atomic hydrogen leads to the complete removal of selenium within the top quintuple layer leaving behind a bismuth bilayer on selenium‐terminated Bi 2 Se 3 (0001) thereby leading to the appearance of hole‐like Rashba‐split surface states. Gold deposited by molecular beam epitaxy substitutes bismuth within the near surface region involving an opening of a gap in the topological surface state.