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Facilitate Measurement of Electrochemical Reactions in Redox‐Based Memristors by Simply Thickening the Electrolyte Layer
Author(s) -
Jamilpanah Loghman,
Mohseni Seyed Majid
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800046
Subject(s) - redox , electrolyte , memristor , cyclic voltammetry , electrochemistry , materials science , oxide , layer (electronics) , nanotechnology , graphene , chemical engineering , electrode , chemistry , inorganic chemistry , electrical engineering , metallurgy , engineering
Redox reactions at the metal/electrolyte interface are the basis of electrochemical metallization memristors that can be understood through cyclic voltammetry (CV). However, voltage limitation during the CV measurements that prevents the resistance switching has limited full understanding of the redox reactions. We apply a thickened ≈20 μm graphene oxide (GO) electrolyte layer in a memristor structure and show that all redox reactions can be determined through CV measurements without resistance switching by sweeping the voltage up to high values. We are able to unhide details of Ag redox reactions (Ag z + /Ag) utilizing a GO thick layer as the solid electrolyte in Pt/GO/Ag cell structure. The results are fundamentally valuable for designing methods to uncover the memristive mechanisms of memristors.