Design, Properties, and TFT Application of Solution‐Processed In‐Ga‐Cd‐O Thin Films

Concerning the revolutionary future of electronic devices, high‐performance solution‐processable semiconductors have earned increasing academic and industrial research interests. In this paper, we synthesize In‐Ga‐Cd‐O semiconductor thin films via a solution method. Transparent amorphous/nanocrystalline oxide thin films with small surface roughness have been grown by controlling the relative ratio of Cd‐content. The present thin‐film transistor with an optimized Cd‐ratio exhibits a saturation field‐effect mobility up to 10 cm 2  V −1  s −1 , an on/off current ratio of ≈1.3 × 10 9 , and a threshold voltage shift of ≈2.6 V under −5 V gate bias of 10 000 s, which are superior or comparable to those reported values of solution‐processed conventional In‐Ga‐Zn‐O counterparts. Our results indicate that the proposed In‐Ga‐Cd‐O semiconductor would endow a promising transparent amorphous/nanocrystalline active material for electronic devices.