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Design, Properties, and TFT Application of Solution‐Processed In‐Ga‐Cd‐O Thin Films
Author(s) -
Song Anran,
Javaid Kashif,
Liang Yu,
Wu Weihua,
Yu Jingjing,
Liang Lingyan,
Zhang Hongliang,
Lan Linfeng,
Chang TingChang,
Cao Hongtao
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800034
Subject(s) - thin film transistor , nanocrystalline material , materials science , amorphous solid , thin film , threshold voltage , semiconductor , surface roughness , optoelectronics , saturation (graph theory) , transistor , nanotechnology , voltage , electrical engineering , composite material , crystallography , chemistry , layer (electronics) , mathematics , engineering , combinatorics
Concerning the revolutionary future of electronic devices, high‐performance solution‐processable semiconductors have earned increasing academic and industrial research interests. In this paper, we synthesize In‐Ga‐Cd‐O semiconductor thin films via a solution method. Transparent amorphous/nanocrystalline oxide thin films with small surface roughness have been grown by controlling the relative ratio of Cd‐content. The present thin‐film transistor with an optimized Cd‐ratio exhibits a saturation field‐effect mobility up to 10 cm 2 V −1 s −1 , an on/off current ratio of ≈1.3 × 10 9 , and a threshold voltage shift of ≈2.6 V under −5 V gate bias of 10 000 s, which are superior or comparable to those reported values of solution‐processed conventional In‐Ga‐Zn‐O counterparts. Our results indicate that the proposed In‐Ga‐Cd‐O semiconductor would endow a promising transparent amorphous/nanocrystalline active material for electronic devices.