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Proton Irradiation Effect on InP‐Based High Electron Mobility Transistor by Numerical Simulation with Non‐Uniform Induced Acceptor‐Like Defects
Author(s) -
Sun Shuxiang,
Chang Mingming,
Zhang Chao,
Cheng Chao,
Li Yuxiao,
Zhong Yinghui,
Ding Peng,
Jin Zhi,
Wei Zhichao
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800027
Subject(s) - fluence , proton , transconductance , materials science , irradiation , transistor , acceptor , electron mobility , cutoff frequency , charge carrier , optoelectronics , electron , high electron mobility transistor , induced high electron mobility transistor , molecular physics , analytical chemistry (journal) , voltage , chemistry , condensed matter physics , electrical engineering , physics , nuclear physics , chromatography , engineering
In this paper, an improved charge control model is proposed to investigate the effect of proton irradiation on InP‐based high electron mobility transistor (HEMT) with fluence varying among 0, 1 × 10 11 , 5 × 10 11 , 1 × 10 12 , and 2 × 10 12 cm −2 . The non‐uniform acceptor‐like defects in InAlAs/InGaAs hetero‐junction layers have been taken into account in the charge control model of the device after proton irradiation. The simulated characteristics by the charge control model have shown compatible trend with experimental data. The calculated results show that the channel current, transconductance, and current gain cutoff frequency depict a decline trend with the increase of proton fluence, and the pinch‐off voltage drifts toward positive value. Moreover, the performances gradually begin to degrade after the proton fluence reaches 5 × 10 11 cm −2 , and deteriorate dramatically with proton fluence up to 2 × 10 12 cm −2 . The observed obvious variation of electrical properties with different proton fluence could be accounted for by the carrier sheet density reduction, which is a result of the carrier removal effect from induced As acceptor‐like defects.