2D MoSe 2 Structures Prepared by Atomic Layer Deposition

Here, we demonstrate the preparation of 2D MoSe 2 structures by the atomic layer deposition technique. In this work, we use ((CH 3 ) 3 Si) 2 Se as the Se precursor and Mo(CO) 6 or MoCl 5 as the Mo precursors. The X‐ray photoelectron spectroscopy (XPS) analyses of the prepared samples have revealed that using the MoCl 5 precursor the obtained structure of MoSe 2 is nearly identical to the reference powder MoSe 2 sample while the composition of the sample prepared from Mo(CO) 6 contains a significant amount of oxygen atoms. Further inspection of as‐deposited samples via scanning electron microscopy (SEM), X‐ray diffraction (XRD), and Raman spectroscopy has disclosed that the MoSe 2 structure based on MoCl 5 is formed from randomly oriented well crystalline flakes with their size ≈100 nm in contrast to the Mo–Se–O compact film originating from Mo(CO) 6 .