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Retention Characteristics of Five‐Layered Aurivillus Films With Large Polarization (Phys. Status Solidi RRL 11/2017)
Author(s) -
Song Dongpo,
Yang Jie,
Wang Yuxing,
Chen Liangyu,
Chu Yanqiu,
Yang Jie,
Zhu Xuebin
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201770358
Subject(s) - ferroelectricity , ferroelectric ram , materials science , polarization (electrochemistry) , aurivillius , thin film , curie temperature , optoelectronics , transistor , condensed matter physics , engineering physics , voltage , electrical engineering , nanotechnology , chemistry , engineering , dielectric , physics , ferromagnetism
At present, the materials used in commercial ferroelectric random access memory (FeRAM) devices are mainly Pb(ZrTi)O 3 (PZT) and SrBi 2 Ta 2 O 9 (SBT). However, there are limitations due to environmental toxicity and lower remanent polarization. Taking into account their integration, the development of new environmental‐friendly materials with large remanent polarization and fatigue resistance is important for fabricating high‐density FeRAMs. Researchers from Jiangsu University of Science and Technology and Institute of Solid State Physics (Chinese Academy of Sciences) (see article no. 1700278 ) show that the Pb‐free ferroelectric Bi 6 Fe 2 Ti 3 O 18 (BFT) thin film may be used for non‐volatile low‐voltage memories. The scientists have investigated the domain switching kinetics and fatigue resistance of BFT thin films. They find that the value of 2 P r (remnant polarization) in such five‐layered Aurivillius film BFT is greater than 50 μC/cm 2 , which is much larger than that of SBT. The obtained films can operate at lower voltage with ultra‐fast switching speed of a ferroelectric domain, and show favorable fatigue and retention properties. The ferroelectric Curie temperature of BFT ( T C ~ 973 K) is also much higher than for PZT ( T C ~ 450–600 K), thus BFT could be used for high‐temperature applications.