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Solution‐Processed Composite Interfacial Layer of MoO x ‐Doped Graphene Oxide for Robust Hole Injection in Organic Light‐Emitting Diode
Author(s) -
Zheng Qinghong,
Li Wanshu,
Zhang Yan,
Xu Kai,
Xu Jiwen,
Wang Hua,
Xiong Jian,
Zhang Xiuyun,
Zhang Xiaowen
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700434
Subject(s) - materials science , graphene , x ray photoelectron spectroscopy , oxide , ultraviolet photoelectron spectroscopy , composite number , ultraviolet , doping , optoelectronics , quantum efficiency , work function , dielectric spectroscopy , solution process , spectroscopy , layer (electronics) , chemical engineering , analytical chemistry (journal) , nanotechnology , composite material , electrode , chemistry , organic chemistry , metallurgy , electrochemistry , physics , quantum mechanics , engineering
Solution‐processed composite hole injection interfacial layer (HIL) of MoO x ‐doped graphene oxide (GO + MoO x ) is facilely fabricated. Using GO + MoO x HIL, we demonstrate highly efficient tris(8‐hydroxy‐quinolinato)aluminum‐based organic light‐emitting diodes with maximum luminous efficiency of 8.6 cd A −1 , power efficiency of 5.7 lm W −1 , and external quantum efficiency of 3.5%, which have been enhanced by 41.0% (75.5%), 39.0% (96.6%), and 40.0% (75.0%), respectively, in comparison with the counterpart using simple HIL of MoO x (GO). Atomic force microscopy and X‐ray/ultraviolet photoelectron spectroscopy measurements show GO + MoO x behaving superior film morphology and extra electronic properties such as enhanced surface work function. Current–voltage characteristics and impedance spectroscopy of hole only cells elucidate that GO + MoO x substantially promotes hole injection and thus accounts for excellent device performance. Our results pave a way for advancing organic electronic devices with solution process as well as boosting GO application.