Premium
Investigations on AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes With Si‐Doped Quantum Barriers of Different Doping Concentrations
Author(s) -
Tian Kangkai,
Chen Qian,
Chu Chunshuang,
Fang Mengqian,
Li Luping,
Zhang Yonghui,
Bi Wengang,
Chen Changqing,
Zhang ZiHui,
Dai Jiangnan
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700346
Subject(s) - doping , optoelectronics , light emitting diode , quantum well , materials science , ultraviolet , diode , polarization (electrochemistry) , quantum efficiency , electric field , quantum , radiative transfer , wavelength , electron , optics , physics , chemistry , laser , quantum mechanics
In this work, we investigate the impact of Si doped AlGaN quantum barriers on the optical powers for [0001] oriented III‐nitride based deep‐ultraviolet light‐emitting diodes (DUV LEDs). The polarization‐induced electric field in the active region is screened as the result of Si‐doped quantum barriers, which gives rise to the improved spatial overlap between electron and hole wave functions. The polarization screening effect within the quantum wells is further proven by the observation of the blue shift for the wavelength. However, the hole distribution across the active region can be significantly retarded if the Si dosage in the quantum barriers is too high. Therefore, the improved radiative recombination within the active region can be realized provided that the Si dosage in the quantum barriers is moderately adjusted to guarantee both the better hole injection efficiency and the screened polarization effect in the multiple quantum wells.