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Metallisation of Boron‐Doped Polysilicon Layers by Screen Printed Silver Pastes
Author(s) -
Mack Sebastian,
Schube Joerg,
Fellmeth Tobias,
Feldmann Frank,
Lenes Martijn,
Luchies JanMarc
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700334
Subject(s) - materials science , saturation current , layer (electronics) , doping , contact resistance , boron , polysilicon depletion effect , chemical vapor deposition , optoelectronics , saturation (graph theory) , screen printing , silicon , nanotechnology , composite material , electrical engineering , transistor , chemistry , voltage , mathematics , engineering , organic chemistry , combinatorics , gate oxide
In this work, we report on hole selective passivating contacts, which consist of a SiO x tunnel layer and an in situ boron‐doped 300 nm thick p + polysilicon layer deposited by LPCVD. Using a SiN x :H capping layer, we show an extremely low dark saturation current density J 0 of 1 fA cm −2 after contact firing. At the same time, we demonstrate that commercially available and screen‐printed fire through Ag pastes are capable of contacting the p + polysilicon layer, with minimum contact resistance ρ c = 2 mΩ cm 2 . We do find increased interface recombination below the metal contacts of around 250 fA cm −2 , which represents a considerable advance compared to conventional screen printed metallisation on diffused junctions.
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