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Thin Film Solar Cell Based on ZnSnN 2 /SnO Heterojunction
Author(s) -
Javaid Kashif,
Yu Jingjing,
Wu Weihua,
Wang Jun,
Zhang Hongliang,
Gao Junhua,
Zhuge Fei,
Liang Lingyan,
Cao Hongtao
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700332
Subject(s) - heterojunction , materials science , optoelectronics , solar cell , electrode , work function , cathode , energy conversion efficiency , rectification , diode , open circuit voltage , thin film , layer (electronics) , nanotechnology , voltage , chemistry , electrical engineering , engineering
In this article, we report the growth of zinc‐tin nitride (ZnSnN 2 ) thin films as a potential absorber for photovoltaic applications by fabricating a heterojunction of n‐ZnSnN 2 /p‐SnO. The performance of the heterojunction has been monitored through selective deposition of top electrode with different materials (Ni/Au or Al). The electron‐transfer process from the ZnSnN 2 layer to the cathode is facilitated by selecting metal electrode with relatively low work function, which also boosts up the electron injection or/and extraction. The diode exhibits a good J–V response in the dark with a rectification ratio of 3 × 10 3 at 1.0 V and an ideality factor of 4.2 in particular with Al as the top electrode. Under illumination, the heterostructure solar cell demonstrates a power conversion efficiency of ≈0.37% with an open circuit voltage of 0.25 V and a short circuit current density of 4.16 mA cm −2 . The prime strategies, on how to improve solar cell efficiency concerning band offsets and band alignment engineering are also discussed.