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Hall Mobility of As‐Grown Cu 2 O Thin Films Obtained Via Electrodeposition on Patterned Au Substrates
Author(s) -
Aggarwal Garima,
Das Chandan,
Agarwal Sumanshu,
Maurya Sandeep K.,
Nair Pradeep R.,
Balasubramaniam K.R.
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700312
Subject(s) - hall effect , substrate (aquarium) , materials science , semiconductor , electrical conductor , electrical resistivity and conductivity , optoelectronics , thin film , electron mobility , analytical chemistry (journal) , composite material , nanotechnology , chemistry , electrical engineering , oceanography , engineering , chromatography , geology
Hall measurement of an electrodeposited Cu 2 O film is rendered difficult as the bilayer structure of semiconductor on top of a conductive substrate obviates the measurement. Here, we propose the use of a patterned Au on glass substrate in line/space configuration for the Hall measurement of electrodeposited Cu 2 O. A continuous, (111) oriented Cu 2 O film was electrodeposited on 8 μm/2 μm Au‐line/space on glass substrate and Hall measurement was performed. The room temperature Hall measurement of the Cu 2 O film on the patterned substrate indicates p ‐type conduction with a hole concentration of 2.2 × 10 17 cm −3 and mobility of 4.7 × 10 −3 cm 2 V −1 s −1 . Additionally, the temperature dependent resistivity exhibits a negative slope that is characteristic of a semiconductor. Therefore, the measured electrical characteristics can be attributed to the electrodeposited Cu 2 O semiconductor film rather than the conductive substrate. This method can be applied for the Hall measurement of any other electrodeposited semiconductor by optimizing the line/space geometry of the conductive substrate.