Hall Mobility of As‐Grown Cu 2 O Thin Films Obtained Via Electrodeposition on Patterned Au Substrates

Hall measurement of an electrodeposited Cu 2 O film is rendered difficult as the bilayer structure of semiconductor on top of a conductive substrate obviates the measurement. Here, we propose the use of a patterned Au on glass substrate in line/space configuration for the Hall measurement of electrodeposited Cu 2 O. A continuous, (111) oriented Cu 2 O film was electrodeposited on 8 μm/2 μm Au‐line/space on glass substrate and Hall measurement was performed. The room temperature Hall measurement of the Cu 2 O film on the patterned substrate indicates p ‐type conduction with a hole concentration of 2.2 × 10 17  cm −3 and mobility of 4.7 × 10 −3  cm 2  V −1  s −1 . Additionally, the temperature dependent resistivity exhibits a negative slope that is characteristic of a semiconductor. Therefore, the measured electrical characteristics can be attributed to the electrodeposited Cu 2 O semiconductor film rather than the conductive substrate. This method can be applied for the Hall measurement of any other electrodeposited semiconductor by optimizing the line/space geometry of the conductive substrate.