Premium
Role of Defects in Tuning the Electronic Properties of Monolayer WS 2 Grown by Chemical Vapor Deposition
Author(s) -
Yang Jie,
Gordiichuk Pavlo,
Zheliuk Oleksandr,
Lu Jianming,
Herrmann Andreas,
Ye Jianting
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700302
Subject(s) - monolayer , chemical vapor deposition , tungsten disulfide , materials science , photoluminescence , nanotechnology , characterization (materials science) , tungsten , atomic force microscopy , deposition (geology) , transition metal , chemical engineering , optoelectronics , chemistry , metallurgy , catalysis , organic chemistry , paleontology , sediment , biology , engineering
Two‐dimensional transition metal dichalcogenides have already attracted enormous research interest. To understand the dependence of electronic properties on the quality and defect morphology is vital for synthesizing high quality materials and the realization of functional devices. Here, we demonstrate the mapping of the conductive variations by conducting atomic force microscopy (C‐AFM) in the monolayer tungsten disulfide (WS 2 ) grown by chemical vapor deposition. The electronic properties are strongly affected by the formation of vacancies in monolayer WS 2 during growth, which is also verified by the photoluminescence. This spatial study of defects provides opportunities for optimization of the growth process for enhancing devices performance of TMDs monolayers.