Effects of Y Dopant on Lattice Distortion and Electrical Properties of In 3 SbTe 2  Phase‐Change Material | Zendy

Choi Minho | Zendy; Choi Heechae | Zendy; Kwon Sehyun | Zendy; Kim Seungchul | Zendy; Lee KwangRyeol | Zendy; Ahn Jinho | Zendy; Kim Yong Tae | Zendy

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Effects of Y Dopant on Lattice Distortion and Electrical Properties of In 3 SbTe 2 Phase‐Change Material

Author(s) -

Choi Minho,

Choi Heechae,

Kwon Sehyun,

Kim Seungchul,

Lee KwangRyeol,

Ahn Jinho,

Kim Yong Tae

Publication year - 2017

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201700275

Subject(s) - dopant , doping , lattice (music) , phase change memory , materials science , condensed matter physics , distortion (music) , power consumption , nanotechnology , optoelectronics , physics , thermodynamics , power (physics) , amplifier , cmos , layer (electronics) , acoustics

Using a computational high‐throughput screening method, 29 doping elements have been investigated for improving the thermal and electrical characteristics of In 3 SbTe 2 (IST) phase‐change material. Among the 29 dopants, it is found that Y offers largest distortion in the lattice structure of IST with negative doping formation energy while Y substitutes the In site. The atomic lattice images clearly show that the In site is substituted by Y and the distortion angles of the Y‐doped IST (Y‐IST) are well matched with the calculated results of density functional theory (DFT). Set/reset speed of the Y‐IST phase‐change memory is faster than IST and Ge 2 Sb 2 Te 5 (GST) devices, which is strongly related with the fast and stable phase transition due to the larger lattice distortion. The power consumption of the Y‐IST device is also less than a fourth of that of the GST device.

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