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Monolayer Superconductivity in WS 2
Author(s) -
Zheliuk Oleksandr,
Lu Jianming,
Yang Jie,
Ye Jianting
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700245
Subject(s) - monolayer , superconductivity , materials science , ambipolar diffusion , tungsten disulfide , chemical vapor deposition , substrate (aquarium) , molybdenum disulfide , doping , tungsten , electron , condensed matter physics , nanotechnology , optoelectronics , composite material , metallurgy , oceanography , physics , quantum mechanics , geology
Superconductivity in monolayer tungsten disulfide (2H‐WS 2 ) is achieved by strong electrostatic electron doping of an electric double‐layer transistor (EDLT). Single crystals of WS 2 are grown by a scalable method − chemical vapor deposition (CVD) on standard Si/SiO 2 substrate. The monolayers are identified by both AFM and color‐coding techniques. The EDLT device based on single‐layer WS 2 shows ambipolar transfer characteristics indicating a semiconducting nature of the material. Metallic transport on the electron side evolves into superconductivity with critical temperature T c = 3.15 K.