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Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer
Author(s) -
Liu Li Ning,
Choi Hoi Wai,
Xu Jing Ping,
Lai Pui To
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700180
Subject(s) - passivation , materials science , dielectric , capacitor , optoelectronics , annealing (glass) , gate dielectric , semiconductor , oxide , layer (electronics) , electrical engineering , composite material , voltage , metallurgy , transistor , engineering
GaAs metal–oxide–semiconductor (MOS) capacitors with NbAlON gate dielectric are fabricated with LaAlON or LaON as interface passivation layer and compared with their counterpart without interface passivation layer. Experimental results show that improvements in electrical properties and reliability are achieved, especially for the sample with LaAlON passivation layer (the hygroscopicity of LaON is largely reduced by Al incorporation): relatively high k value (25.5), low interface‐state density (6.8 × 10 11 cm −2 eV −1 ), small flatband voltage (0.67 V), small hysteresis (45 mV), small frequency dispersion and low gate leakage (6.18 × 10 −6 A cm −2 at V fb + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface and reduced in‐diffusion of elements from the gate dielectric to the GaAs surface by the LaAlON passivation layer during gate‐dielectric annealing.