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Recent Developments in Spin Transfer Torque MRAM
Author(s) -
Sbiaa Rachid,
Piramanayagam S. N.
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700163
Subject(s) - magnetoresistive random access memory , spin transfer torque , dram , torque , universal memory , random access memory , computer science , dynamic random access memory , magnetic storage , electrical engineering , power consumption , racetrack memory , magnetization , power (physics) , semiconductor memory , computer hardware , engineering , memory management , physics , magnetic field , interleaved memory , quantum mechanics , thermodynamics , operating system
Spin transfer torque (STT) switching‐based magnetic random access memory (MRAM) is gaining significant industrial and academic attention due to its potential application as a non‐volatile memory device in computing devices, smartphones, and so on. STT‐MRAM devices with in‐plane magnetization configuration have been marketed as niche products. Devices with out‐of‐plane magnetization are being considered for embedded memory as the first step. Aggressive goals include replacing dynamic random access memory (DRAM) with STT‐MRAM. This review article introduces the basics of STT‐MRAM and describes the recent progress in overcoming certain challenges such as reduction of power consumption and increase of storage density, which will make it a strong competitor for DRAM.