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Series resistance imaging of silicon solar cells by lock‐in photoluminescence
Author(s) -
Song Peng,
Liu Junyan,
Oliullah Mohummad,
Wang Yang
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700153
Subject(s) - photoluminescence , lock (firearm) , equivalent series resistance , silicon , materials science , computer science , signal (programming language) , noise (video) , optoelectronics , series (stratigraphy) , figure of merit , optics , artificial intelligence , physics , electrical engineering , engineering , image (mathematics) , voltage , geology , mechanical engineering , programming language , paleontology
An advanced method for determining the spatially resolved series resistance of silicon solar cells by lock‐in photoluminescence (LIPL) is presented, which only needs two LIPL images taken at different illumination levels similarly to the photoluminescence (PL) method. However, the LIPL approach does not require the calibration images at short circuit conditions, and it has the merit of improving the signal to noise ratio (SNR) in comparison with the PL method. Furthermore, the R s images obtained by LIPL are in good agreement with PL, and the LIPL method seems more independent of the acquisition time which could make the acquisition time short. Thus, LIPL could provide a possible approach to achieve more accurate inline characterization of spatially resolved information.