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Control of spin‐reorientation transition in (0001) oriented α‐Fe 2 O 3 thin film by external magnetic field and temperature
Author(s) -
Pati Satya Prakash,
AlMahdawi Muftah,
Ye Shujun,
Nozaki Tomohiro,
Sahashi Masashi
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700101
Subject(s) - condensed matter physics , materials science , thin film , phase transition , epitaxy , sputtering , surface roughness , transition temperature , magnetic field , field (mathematics) , magnetization , analytical chemistry (journal) , nanotechnology , chemistry , physics , composite material , superconductivity , layer (electronics) , mathematics , quantum mechanics , chromatography , pure mathematics
A pure‐phase, unstrained and epitaxial α‐Fe 2 O 3 film of thickness 250 nm has been fabricated by reactive rf sputtering over c‐Al 2 O 3 substrate with nominal average surface roughness of 0.71 nm. Field induced spin‐reorientation temperature ( T SR ) and temperature dependent spin‐reorientation field ( H SR ) have been investigated. A linear relationship in the result has been found with ∂ T SR /∂ H SR equal to −0.92 ± 0.05 K kOe −1 and −0.89 ± 0.175 K kOe −1 by both methods, respectively. The field induced entropy change is argued to be the possible cause for the shift in the spin‐reorientation temperature with applied field. The entropy change associated with the first‐order phase transition is calculated on the basis of Clausius–Clapeyron equation and found to be 0.029 J kg −1 K −1 .