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Photon up‐converting (Yb,Er) 2 O 3 thin films by atomic layer deposition
Author(s) -
Tuomisto Minnea,
Giedraityte Zivile,
Karppinen Maarit,
Lastusaari Mika
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700076
Subject(s) - atomic layer deposition , thin film , materials science , deposition (geology) , optoelectronics , layer (electronics) , infrared , analytical chemistry (journal) , nanotechnology , optics , chemistry , physics , paleontology , chromatography , sediment , biology
We report up‐converting (Yb,Er) 2 O 3 thin films grown with the atomic layer deposition (ALD) technique. The films are crystalline and show a homogeneous morphology with a roughness less than 1 nm for 40 nm thick films. High‐intensity near‐infrared (NIR) to green and red two‐photon up‐conversion emission is obtained with 974 nm excitation through an absorption by Yb 3+ , followed by a Yb 3+ ‐Er 3+ energy transfer and emission from Er 3+ . The ALD technique promises to be excellent for producing up‐converting films for many applications such as near‐infrared radiation absorbing layers for solar cells and sensors in point‐of‐care biomedical diagnostics. Schematic picture of the ALD‐grown (Yb,Er) 2 O 3 thin film including the up‐conversion emission spectra.