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An Advanced Qualitative Model Regarding the Role of Oxygen During POCl 3 Diffusion in Silicon
Author(s) -
Li Hongzhao,
Ma FaJun,
Hameiri Ziv,
Wenham Stuart,
Abbott Malcolm
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700046
Subject(s) - x ray photoelectron spectroscopy , diffusion , silicon , oxygen , secondary ion mass spectrometry , phosphorus , deposition (geology) , doping , materials science , qualitative analysis , chemical engineering , analytical chemistry (journal) , chemistry , chemical physics , ion , thermodynamics , environmental chemistry , qualitative research , optoelectronics , metallurgy , organic chemistry , physics , geology , paleontology , social science , sediment , sociology , engineering
POCl 3 diffusion has seen decades of research interest and industrial applications. However, further understanding is required for the correlation between the increasing oxygen flow and decreasing inactive phosphorus concentration. In this study, we consider a “free phosphorus oxidation” reaction for a consistent explanation of results in the literature. For verification, four phosphorus doping profiles are fabricated with different oxygen flows during pre‐deposition and drive‐in. Secondary ion mass spectrometry and X‐ray photoelectron spectroscopy are performed on these profiles, with a particular attention to the relative concentrations within the phosphosilicate glass. From experimental results, we not only confirm this reaction, but also present an advanced qualitative model to unlock the fundamental mechanisms during POCl 3 diffusion.