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Diode laser annealing on sputtered epitaxial Cu 2 ZnSnS 4 thin films
Author(s) -
Song Ning,
Huang Jialiang,
Green Martin A.,
Hao Xiaojing
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201700033
Subject(s) - czts , materials science , annealing (glass) , crystallinity , thin film , optoelectronics , laser , sputter deposition , epitaxy , diode , optics , sputtering , metallurgy , nanotechnology , composite material , physics , layer (electronics)
In this work, epitaxial Cu 2 ZnSnS 4 (CZTS) films grown by magnetron sputtering were annealed by continuous wavelength diode laser as an alternative post‐deposition heat treatment replacing conventional post‐annealing within sulfur atmosphere to improve the film quality. Upon ultrafast millisecond diode laser annealing, improvement of crystallinity and reduction of Cu/Zn disordering were observed in the CZTS thin films. The results indicate that the diode laser treatment can enable fast, effective, and efficient annealing of CZTS thin films.