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Cover Picture: Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire (Phys. Status Solidi RRL 9/2016)
Author(s) -
Ullah Md. Barkat,
Avrutin Vitaliy,
Li Si Qian,
Das Saikat,
Monavarian Morteza,
Toporkov Mykyta,
Özgür Ümit,
Ruterana Pierre,
Morkoç Hadis
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201670753
Subject(s) - sapphire , molecular beam epitaxy , epitaxy , materials science , optoelectronics , cover (algebra) , optics , nanotechnology , physics , engineering , mechanical engineering , laser , layer (electronics)
No abstract is available for this article.