Back Cover: Identification of grain boundaries as degradation site in n‐channel organic field‐effect transistors determined via conductive atomic force microscopy (Phys. Status Solidi RRL 4/2016) | Zendy

Müller Sebastian | Zendy; Baumann RoelfPeter | Zendy; Geßner Thomas | Zendy; Weitz R. Thomas | Zendy

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Back Cover: Identification of grain boundaries as degradation site in n‐channel organic field‐effect transistors determined via conductive atomic force microscopy (Phys. Status Solidi RRL 4/2016)

Author(s) -

Müller Sebastian,

Baumann RoelfPeter,

Geßner Thomas,

Weitz R. Thomas

Publication year - 2016

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201670725

Subject(s) - cover (algebra) , conductive atomic force microscopy , materials science , channel (broadcasting) , atomic force microscopy , grain boundary , degradation (telecommunications) , transistor , identification (biology) , electrical conductor , optoelectronics , field effect transistor , nanotechnology , condensed matter physics , composite material , electrical engineering , physics , engineering , mechanical engineering , biology , microstructure , voltage , botany

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