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Back Cover: Identification of grain boundaries as degradation site in n‐channel organic field‐effect transistors determined via conductive atomic force microscopy (Phys. Status Solidi RRL 4/2016)
Author(s) -
Müller Sebastian,
Baumann RoelfPeter,
Geßner Thomas,
Weitz R. Thomas
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201670725
Subject(s) - cover (algebra) , conductive atomic force microscopy , materials science , channel (broadcasting) , atomic force microscopy , grain boundary , degradation (telecommunications) , transistor , identification (biology) , electrical conductor , optoelectronics , field effect transistor , nanotechnology , condensed matter physics , composite material , electrical engineering , physics , engineering , mechanical engineering , biology , microstructure , voltage , botany
No abstract is available for this article.