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Piezoelectricity in two‐dimensional group III–V buckled honeycomb monolayers
Author(s) -
Gao Ruilong,
Gao Yiyuan
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600412
Subject(s) - piezoelectricity , monolayer , materials science , honeycomb , condensed matter physics , group (periodic table) , honeycomb structure , piezoelectric coefficient , ferroelectricity , optoelectronics , nanotechnology , composite material , chemistry , physics , organic chemistry , dielectric
We studied the elastic and piezoelectric properties of buckled honeycomb group III–V monolayers (GaP, GaAs, GaSb, InP, InAs and InSb) by DFT calculations. Those buckled monolayers are ferroelectric and have nonzero e 11 , e 31 , d 11 and d 31 piezoelectric coefficients. Our calculations show that those monolayers are good piezoelectric materials and a pronounced periodic trend of the piezoelectric coefficients e 11 , e 31 , d 11 and d 31 was found. Group III–V monolayers are promising candidates for future atomically thin piezoelectric applications such as transducers, sensors, and energy harvesting devices.