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Band edge smearing due to compositional disorder in multi‐component d ‐dimensional alloys
Author(s) -
Wiemer M.,
Jandieri K.,
Koch M.,
Gebhard F.,
Baranovskii S. D.
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600352
Subject(s) - component (thermodynamics) , semiconductor , enhanced data rates for gsm evolution , materials science , charge (physics) , charge carrier , chemical physics , condensed matter physics , statistical physics , physics , optoelectronics , thermodynamics , computer science , quantum mechanics , telecommunications
Modern optoelectronic devices are usually based on multi‐component alloys. Local statistical fluctuations in the concentrations of chemically different components cause energy fluctuations experienced by charge carriers. So far the theory for compositional disorder has been developed for compounds, in which atoms of only two chemically different types can occupy sites in a given sublattice. We extend the theoretical consideration for multi‐compound alloys containing more than two chemically different semiconductor species occupying sites in the same sublattice. Different spatial dimensionalities are considered. A comparison between theoretical predictions and experimental data can be used to reveal compositional dependencies of such material parameters as the effective mass.