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Partial crystallization in amorphous magnetic film induced by Ru layer interface
Author(s) -
Shi J. Z.,
Yang Y.,
Tan H. K.,
Piramanayagam S. N.,
Lim C. B.,
Seet H. L.,
Ho S. L.,
Hu J. F.
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600341
Subject(s) - overlayer , amorphous solid , materials science , crystallization , transmission electron microscopy , sputtering , sputter deposition , layer (electronics) , analytical chemistry (journal) , partial pressure , crystallography , chemical engineering , thin film , composite material , nanotechnology , chemistry , chromatography , engineering , organic chemistry , oxygen
Partial crystallization in amorphous magnetic film is observed in this study. The film of Co 46 Fe 46 Zr 5 B 3 /Ru/Co 46 Fe 46 Zr 5 B 3 (CFZB/Ru/CFZB) was prepared on glass substrate by DC magnetron sputtering. The CFZB underlayer (CFZB‐UL) and the CFZB overlayer (CFZB‐OL) were deposited under nominally same sputtering conditions, i.e. target, working gas, working pressure, input power, and deposition duration. The transmission electron microscopy (TEM) images with fast Fourier transform (FFT) patterns revealed that the CFZB‐UL was amorphous while the CFZB‐OL became unexpectedly partially crystallized. The result of X‐ray diffraction (XRD) spectra verified the TEM observation. The cause of the partial crystallization is attributed to the lower concentration of glass formers and the lattice matching between the overlayer and the Ru layer below.