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Nanometric diamond delta doping with boron
Author(s) -
Butler James E.,
Vikharev Anatoly,
Gorbachev Alexei,
Lobaev Mikhail,
Muchnikov Anatoly,
Radischev Dmitry,
Isaev Vladimir,
Chernov Valerii,
Bogdanov Sergey,
Drozdov Mikail,
Demidov Evgeniy,
Surovegina Ekaterina,
Shashkin Vladimir,
Davydov Albert,
Tan Haiyan,
Meshi Louisa,
PakpourTabrizi Alexander C.,
Hicks MarieLaure,
Jackman Richard B.
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600329
Subject(s) - diamond , materials science , doping , optoelectronics , semiconductor , dopant , epitaxy , electron mobility , boron , material properties of diamond , nanotechnology , chemistry , composite material , layer (electronics) , organic chemistry
Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ‘delta doped’ layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm 2 /Vs and sheet carrier concentrations to 6 × 10 13 cm –2 , thus enabling a new class of active diamond electronic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)