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Remarkable room‐temperature magnetoresistance in silicon strip devices
Author(s) -
Guo Hui,
Cui Lei,
Li Yali,
Chen Qiang,
Fan Xiaolong,
Wang Fangcong,
Li Junshuai
Publication year - 2017
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600253
Subject(s) - magnetoresistance , silicon , magnetic field , materials science , condensed matter physics , voltage , electrical engineering , electrical contacts , nuclear magnetic resonance , optoelectronics , physics , engineering , quantum mechanics
In this paper, we report remarkable room‐temperature magnetoresistance (MR) in silicon strip devices. Saturating and non‐saturating MRs can be realized based on the measuring configurations with one top contact and ten top contacts, respectively. Using the one‐top‐contact measurement, a saturating MR ratio of ∼400% is obtained at an applied voltage of only 1.0 V when the magnetic field is larger than 0.8 T. While the non‐saturating MR is achieved in the ten‐top‐contact measurement and the MR ratio is only ∼155% for the 1.0 V applied voltage even under the magnetic field of 1.2 T. The differences for MR ratio values and change trends in these two measuring configurations are attributed to the enhanced Hall electric field with the increase of the top contact number.