Premium
Multi‐crystalline silicon solar cells with metal‐assisted nano‐texturing using HNO 3 as hole injection agent
Author(s) -
Es Fırat,
Baytemir Gülsen,
Kulakci Mustafa,
Turan Raşit
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600245
Subject(s) - materials science , wafer , passivation , silicon , nano , texture (cosmology) , etching (microfabrication) , crystalline silicon , fabrication , nanotechnology , analytical chemistry (journal) , optoelectronics , composite material , chemistry , layer (electronics) , image (mathematics) , chromatography , artificial intelligence , computer science , medicine , alternative medicine , pathology
In this study, metal‐assisted etching (MAE) with nitric acid (HNO 3 ) as a hole injecting agent has been employed to texture multi‐crystalline silicon wafers. It was previously proven that addition of HNO 3 enabled control of surface texturing so as to form nano‐cone shaped structures rather than nanowires. The process parameters optimized for optically efficient texturing have been applied to multi‐crystalline wafers. Fabrication of p‐type Al:BSF cells have been carried out on textured samples with thermal SiO 2 /PECVD‐SiN x stack passivation and screen printed metallization. Firing process has been optimized in order to obtain the best contact formation. Finally, j sc enhancement of 0.9 mA/cm 2 and 0.6% absolute increase in the efficiency have been achieved. This proves that the optimized MAE texture process can be successfully used in multi‐crystalline wafer texturing with standard passivation methods.J – V curves and SEM images of the nano and iso‐textured samples. j sc enhancement of 0.9 mA/cm 2 together with 0.6% absolute efficiency gain was observed on nano‐textured samples.