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Comparative study of single and multi domain CVD graphene using large‐area Raman mapping and electrical transport characterization
Author(s) -
Thodkar Kishan,
El Abbassi Maria,
Lüönd Felix,
Overney Frédéric,
Schönenberger Christian,
Jeanneret Blaise,
Calame Michel
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600211
Subject(s) - graphene , materials science , raman spectroscopy , characterization (materials science) , chemical vapor deposition , sheet resistance , electron mobility , doping , raman scattering , grain boundary , graphene nanoribbons , nanotechnology , optoelectronics , microstructure , composite material , optics , physics , layer (electronics)
We systematically investigate the impact of granularity in CVD graphene films by performing Raman mapping and electrical characterization of single (SD) and multi domain (MD) graphene. In order to elucidate the quality of the graphene film, we study its regional variations using large‐area Raman mapping and compare the G and 2D peak positions of as‐transferred chemical vapor deposited (CVD) graphene on SiO 2 substrate. We find a similar upshift in wavenumber in both SD and MD graphene in comparison to freshly exfoliated graphene. In our case, doping could play the dominant role behind the observation of such upshifts rather than the influence due to strain. Interestingly, the impact of the polymer‐assisted wet transfer process is the same in both the CVD graphene types. The electrical characterization shows that SD graphene exhibits a substantially higher (a factor 5) field‐effect mobility when compared to MD graphene. We attribute the low sheet resistance and mobility enhancement to a decrease in charge carrier scattering thanks to a reduction of the number of grain boundaries and defects in SD graphene.