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Investigation of various optical transitions in GaAs/Al 0.3 Ga 0.7 As double quantum ring grown by droplet epitaxy
Author(s) -
Kim Jong Su
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600171
Subject(s) - spectroscopy , photoluminescence , molecular beam epitaxy , epitaxy , materials science , gallium arsenide , condensed matter physics , optoelectronics , quantum well , chemistry , layer (electronics) , optics , physics , laser , nanotechnology , quantum mechanics
This work examines the optical transitions of a GaAs double quantum ring (DQR) embedded in Al 0.3 Ga 0.7 As matrix by photoreflectance spectroscopy (PR). The GaAs DQR was grown by droplet epitaxy (DE). The optical properties of the DQR were investigated by excitation‐intensity and temperature‐dependent PR. The various optical transitions were observed in PR spectra, whereas the photoluminescence (PL) spectrum shows only the DQR and GaAs band emissions. The various optical transitions were identified for the GaAs near‐band‐edge transition, surface confined state (SCS), DQR confined state, wetting layer (WL), spin–orbital split ( E GaAs + Δ o ), and AlGaAs band transition. PR spectroscopy can identify various optical transitions that are invisible in PL. The PR results show that the GaAs/AlGaAs DQR has complex electronic structures due to the various interfaces resulting from DE.