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Reduction of low‐frequency noise in multilayer MoS 2 FETs using a Fermi‐level depinning layer
Author(s) -
Kim Yonghun,
Park Woojin,
Yang Jin Ho,
Cho Chunhum,
Lee Sang Kyung,
Lee Byoung Hun
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600136
Subject(s) - materials science , optoelectronics , noise (video) , infrasound , field effect transistor , transistor , flicker noise , layer (electronics) , transition metal , molybdenum , low frequency , fermi level , metal , nanotechnology , electronic engineering , electrical engineering , noise figure , cmos , computer science , physics , chemistry , telecommunications , metallurgy , acoustics , engineering , voltage , artificial intelligence , image (mathematics) , amplifier , biochemistry , quantum mechanics , catalysis , electron
Two‐dimensional transition metal dichalcogenides (TMDCs) are potential candidate materials for future thin‐film field effect transistors (FETs). However, many aspects of this device must be optimized for practical applications. In addition, low‐frequency noise that limits the design window of electronic devices, in general, must be minimized for TMD‐based FETs. In this study, the low‐frequency noise characteristics of multilayer molybdenum disulphide (MoS 2 ) FETs were investigated in detail, with two different contact structures: titanium (Ti) metal–MoS 2 channel and Ti metal–TiO 2 interlayer–MoS 2 channel. The results showed that the noise level of the device with a TiO 2 interlayer reduced by one order of magnitude compared with the device without the TiO 2 interlayer. This substantial improvement in the noise characteristics could be explained using the carrier number of fluctuation model. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)