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Direct growth of graphene film on piezoelectric La 3 Ga 5.5 Ta 0.5 O 14 crystal
Author(s) -
Brzhezinskaya Maria,
Irzhak Artemii,
Irzhak Dmitry,
Kang Tae Won,
Konko Oleg,
Matveev Viktor,
Panin Gennady,
Roshchupkin Dmitry
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600122
Subject(s) - graphene , raman spectroscopy , materials science , crystal (programming language) , xanes , graphene nanoribbons , crystal growth , valence (chemistry) , crystallography , analytical chemistry (journal) , spectroscopy , nanotechnology , chemistry , optics , physics , organic chemistry , quantum mechanics , computer science , programming language , chromatography
For the first time, a few layer graphene was grown on the surface of the polar X ‐cut (110) of a piezoelectric La 3 Ga 5.5 Ta 0.5 O 14 crystal by the CVD method. This polar X ‐cut is characterized by a good matching of the crystal lattice parameters of La 3 Ga 5.5 Ta 0.5 O 14 and two‐dimensional graphene crystal, as well as the presence of piezoelectric fields on the surface of the substrate, which could affect the graphene growth process. Raman spectroscopy investigation has shown the ability for direct growth of graphene on the piezoelectric crystal. The NEXAFS spectroscopy studies of the film grown on the surface of the X ‐cut of an La 3 Ga5 .5 Ta 0.5 O 14 crystal also confirmed that the grown film is graphene. Moreover, the NEXAFS spectra enable the conclusion that additional electron states are formed as a result of chemical bonding between the atoms of graphene and the substrate which proceeds through hybridization of the valence electron states of the substrate and graphene atoms. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)