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Growth and properties of self‐catalyzed (In,Mn)As nanowires
Author(s) -
Bouravleuv Alexei,
Cirlin George,
Reznik Rodion,
Khrebtov Artem,
Samsonenko Yuriy,
Werner Peter,
Soshnikov Ilya,
Savin Alexander,
Lipsanen Harri
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600097
Subject(s) - nanowire , materials science , transmission electron microscopy , wetting layer , molecular beam epitaxy , wetting , stacking , spintronics , nanotechnology , layer (electronics) , crystallography , epitaxy , condensed matter physics , chemistry , composite material , ferromagnetism , physics , organic chemistry
Mn‐assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side‐walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)