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Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes
Author(s) -
Bulashevich Kirill A.,
Karpov Sergey Yu.
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600059
Subject(s) - light emitting diode , optoelectronics , recombination , nitride , materials science , diode , surface (topology) , gallium nitride , chemistry , nanotechnology , layer (electronics) , mathematics , biochemistry , geometry , gene
The paper considers surface recombination at the free active region surface as the mechanism of carrier losses which has not yet been discussed with regard to III‐nitride LEDs despite of its evident importance for AlGaInP‐based light emitters. Using advanced thin‐film and triangular volumetric chip designs reported in literature as prototypes, we have demonstrated by simulation a noticeable impact of surface recombination on the wall‐plug efficiency of InGaN‐based LEDs. Various types of LEDs whose efficiency may be especially affected by surface recombination are discussed. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)