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High‐mobility flexible thin‐film transistors with a low‐temperature zirconium‐doped indium oxide channel layer
Author(s) -
Xiao Peng,
Dong Ting,
Lan Linfeng,
Lin Zhenguo,
Song Wei,
Song Erlong,
Sun Sheng,
Li Yuzhi,
Gao Peixiong,
Luo Dongxiang,
Xu Miao,
Peng Junbiao
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600052
Subject(s) - thin film transistor , materials science , indium , threshold voltage , transistor , doping , optoelectronics , zirconium , oxide , layer (electronics) , saturation (graph theory) , voltage , nanotechnology , electrical engineering , metallurgy , engineering , mathematics , combinatorics
Thin film transistors (TFTs) with zirconium‐doped indium oxide (ZrInO) channel layer were successfully fabricated on a flexible PEN substrate with process temperature of only 150 °C. The flexible ZrInO TFT exhibited excellent electrical performance with a saturation mobility of as high as 22.6 cm 2 V –1 s –1 , a sub‐threshold swing of 0.39 V/decade and an on/off current ratio of 2.5 × 10 7 . The threshold voltage shifts were 1.89 V and −1.56 V for the unpassivated flexible ZrInO TFT under positive and negative gate bias stress, respectively. In addition, the flexible ZrInO TFT was able to maintain the relatively stable performance at bending curvatures larger than 20 mm, but the off current increased apparently after bent at 10 mm. Detailed studies showed that Zr had an effect of suppress the free carrier generation without seriously distorting the In 2 O 3 lattice. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)