Premium
Low leakage stoichiometric SrTiO 3 dielectric for advanced metal–insulator–metal capacitors
Author(s) -
Popovici Mihaela,
Kaczer Ben,
Afanas'ev Valeri V.,
Sereni Gabriele,
Larcher Luca,
Redolfi Augusto,
Elshocht Sven Van,
Jurczak Malgorzata
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600036
Subject(s) - materials science , stoichiometry , dielectric , capacitor , crystallization , strontium titanate , metal , analytical chemistry (journal) , optoelectronics , metallurgy , chemical engineering , chemistry , electrical engineering , organic chemistry , chromatography , voltage , engineering
Metal–insulator–metal capacitors (MIMCAP) with stoichiometric SrTiO 3 dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr‐rich STO seed layer, with the Ti‐rich STO top layer. The resulted stoichiometric SrTiO 3 would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr‐rich STO which allow further equivalent oxide thickness downscaling.Schematic of MIMCAP with stoichiometric STO dielectric formed from bottom Sr‐rich STO and top Ti‐rich STO after intermixing during crystallization anneal. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)