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Molybdenum oxide thin films in CdTe‐based electronic and optoelectronic devices
Author(s) -
Solovan M. M.,
Brus V. V.,
Mostovyi A. I.,
Maryanchuk P. D.,
Tresso E.,
Gavaleshko N. M.
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201600010
Subject(s) - ohmic contact , optoelectronics , heterojunction , cadmium telluride photovoltaics , photodiode , materials science , thin film , molybdenum , photoconductivity , sputter deposition , sputtering , nanotechnology , layer (electronics) , metallurgy
This paper reports on the both possible applications of molybdenum oxide (MoO x ) thin films in combination with hole or electron conducting CdTe. The high quality ohmic contancts and strongly rectifying photodiodes were prepared by the DC magnetron sputtering of MoO x thin films onto freshly cleaved p‐ and n‐type CdTe single crystal substrates. The analysis of DC and AC electrical properties of the MoO x / p‐CdTe ohmic contact was carried out. The dominating current transport mechanisms through the MoO x /p‐CdTe heterojunction at forward and reverse bias were determined. The unoptimized heterojunction photodiode showed promising rectifying and photoelectrical characteristics for practical application in the photoconductive mode. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)