Molybdenum oxide thin films in CdTe‐based electronic and optoelectronic devices | Zendy

Solovan M. M. | Zendy; Brus V. V. | Zendy; Mostovyi A. I. | Zendy; Maryanchuk P. D. | Zendy; Tresso E. | Zendy; Gavaleshko N. M. | Zendy

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Molybdenum oxide thin films in CdTe‐based electronic and optoelectronic devices

Author(s) -

Solovan M. M.,

Brus V. V.,

Mostovyi A. I.,

Maryanchuk P. D.,

Tresso E.,

Gavaleshko N. M.

Publication year - 2016

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201600010

Subject(s) - ohmic contact , optoelectronics , heterojunction , cadmium telluride photovoltaics , photodiode , materials science , thin film , molybdenum , photoconductivity , sputter deposition , sputtering , nanotechnology , layer (electronics) , metallurgy

This paper reports on the both possible applications of molybdenum oxide (MoO x ) thin films in combination with hole or electron conducting CdTe. The high quality ohmic contancts and strongly rectifying photodiodes were prepared by the DC magnetron sputtering of MoO x thin films onto freshly cleaved p‐ and n‐type CdTe single crystal substrates. The analysis of DC and AC electrical properties of the MoO x / p‐CdTe ohmic contact was carried out. The dominating current transport mechanisms through the MoO x /p‐CdTe heterojunction at forward and reverse bias were determined. The unoptimized heterojunction photodiode showed promising rectifying and photoelectrical characteristics for practical application in the photoconductive mode. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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