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Bulk and surface electron transport in topological insulator candidate YbB 6– δ
Author(s) -
Glushkov Vladimir V.,
Bozhko Alexey D.,
Bogach Alexey V.,
Demishev Sergey V.,
Dukhnenko Anatoliy V.,
Filipov Volodimir B.,
Kondrin Mikhail V.,
Kuznetsov Alexey V.,
Sannikov Ilia I.,
Semeno Alexey V.,
Shitsevalova Natalya Yu.,
Voronov Valeriy V.,
Sluchanko Nikolay E.
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510452
Subject(s) - condensed matter physics , electron , electrical resistivity and conductivity , topological insulator , band bending , electron transport chain , hall effect , conductivity , materials science , relaxation (psychology) , physics , chemistry , psychology , social psychology , biochemistry , quantum mechanics
We report the study of transport and magnetic properties of the YbB 6– δ single crystals grown by inductive zone melting. A strong disparity in the low temperature resistivity, Seebeck and Hall coefficients is established for the samples with the different level of boron deficiency. The effective parameters of the charge transport in YbB 6– δ are shown to depend on the concentration of intrinsic defects, which is estimated to range from 0.09% to 0.6%. The pronounced variation of Hall mobility μ H found for bulk holes is induced by the decrease of transport relaxation time from τ ≈ 7.7 fs for YbB 5.994 to τ ≈ 2.2 fs for YbB 5.96 . An extra contribution to conductivity from electrons with μ H ≈ –1000 cm 2 V –1 s –1 and the very low concentration n / n Yb ≈ 10 –6 discovered below 20 K for all the single crystals under investigation is suggested to arise from the surface electron states appeared in the inversion layer due to the band bending. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)