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Magnetoelectric oxide films for spin manipulation in graphene
Author(s) -
Stuart S. C.,
Gray B.,
Nevola D.,
Su L.,
Sachet E.,
Ulrich M.,
Dougherty D. B.
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510433
Subject(s) - graphene , poling , materials science , magnetization , condensed matter physics , magnetic field , spin (aerodynamics) , dielectric , optoelectronics , magnetic force microscope , magnetoelectric effect , nanotechnology , electric field , graphite , multiferroics , ferroelectricity , physics , composite material , quantum mechanics , thermodynamics
The challenge of creating a graphene spin field effect transistor (spin‐FET) demands a magnetic gate dielectric material whose magnetization can be switched electrically. We have grown films of Cr 2 O 3 on top of graphite and graphene by pulsed laser deposition that shows this crucial functionality. We demonstrate that the Cr 2 O 3 films are magnetoelectric by poling them in combined electric and magnetic fields and then using magnetic force microscopy to observe spontaneous surface domain structure as a function of poling field. In addition, we show that the electric field created by a conducting AFM tip can be used to write magnetic patterns in the film that demonstrate the kind of continuous magnetoelectric control needed for a prototype spin‐FET. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
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