Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures | Zendy

Yan Xin | Zendy; Zhang Xia | Zendy; Li Junshuai | Zendy; Wu Yao | Zendy; Li Bang | Zendy; Ren Xiaomin | Zendy

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Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures

Author(s) -

Yan Xin,

Zhang Xia,

Li Junshuai,

Wu Yao,

Li Bang,

Ren Xiaomin

Publication year - 2016

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201510403

Subject(s) - quantum dot , blueshift , heterojunction , nanowire , optoelectronics , excitation , materials science , condensed matter physics , zinc , photoluminescence , chemistry , physics , quantum mechanics , metallurgy

The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski–Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube‐root dependence on the excitation power is observed, suggesting a type‐II band alignment. The peak position of dots initially red‐shifts and then blue‐shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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