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Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures
Author(s) -
Yan Xin,
Zhang Xia,
Li Junshuai,
Wu Yao,
Li Bang,
Ren Xiaomin
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510403
Subject(s) - quantum dot , blueshift , heterojunction , nanowire , optoelectronics , excitation , materials science , condensed matter physics , zinc , photoluminescence , chemistry , physics , quantum mechanics , metallurgy
The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski–Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube‐root dependence on the excitation power is observed, suggesting a type‐II band alignment. The peak position of dots initially red‐shifts and then blue‐shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)