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Piezoelectric effect in GaAs nanowires: experiment and theory
Author(s) -
Lysak Volodymyr,
Soshnikov Ilya P.,
Lahderanta Erkki,
Cirlin George E.
Publication year - 2016
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510381
Subject(s) - nanowire , wurtzite crystal structure , piezoelectricity , materials science , condensed matter physics , nanogenerator , piezoelectric coefficient , crystal (programming language) , nanotechnology , optoelectronics , composite material , physics , zinc , computer science , metallurgy , programming language
The anomalous piezoelectric effect in GaAs nanowires was detected (the piezoelectric strain coefficient up to d 33 ≈ 26 pC/N) that is 12 times larger than the theoretically estimated value. This result is explained by the dominant content of the phase with the wurtzite‐type crystal structure in GaAs nanowires and an increased pressing force by the contact layer on the nanowire. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)