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Spin gapless semiconductor like Ti 2 MnAl film as a new candidate for spintronics application
Author(s) -
Feng Wuwei,
Fu Xiao,
Wan Caihua,
Yuan Zhonghui,
Han Xiufeng,
Quang Nguyen Van,
Cho Sunglae
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510340
Subject(s) - spintronics , ferrimagnetism , materials science , condensed matter physics , semiconductor , magnetization , gapless playback , magnetic semiconductor , curie temperature , coercivity , optoelectronics , ferromagnetism , magnetic field , physics , quantum mechanics
A novel Heusler ferrimagnet Ti 2 MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin‐gapless‐semiconductor (SGS) nature of the stoichiometric Ti 2 MnAl, in agreement with theoretical prediction. The as‐grown SGS‐like Ti 2 MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor‐like behavior at room temperature allowing good compatibility with commercial Si‐based semiconductor. In this regards, Ti 2 MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)